Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-23T20:39:57.820Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 March 2011

Hai Lu ,
William J. Schaff ,
Jeonghyun Hwang  and
Lester F. Eastman
Hai Lu
Affiliation:
Department of Electrical and Computer Engineering, Cornell University Ithaca, New York14853
William J. Schaff
Affiliation:
Department of Electrical and Computer Engineering, Cornell University Ithaca, New York14853
Jeonghyun Hwang
Affiliation:
Department of Electrical and Computer Engineering, Cornell University Ithaca, New York14853
Lester F. Eastman
Affiliation:
Department of Electrical and Computer Engineering, Cornell University Ithaca, New York14853
Get access

Abstract

InN is an important III-V compound semiconductor with many potential microelectronic and optoelectronic applications. In this study, we prepared epitaxial InN on (0001) sapphire with an AlN buffer layer by molecular beam epitaxy, and its variation, migration enhanced epitaxy. A series of samples were grown with different substrate temperatures ranging from 360°C to 590°C. The optimum growth temperature for InN was found to be between 450°C and 500°C. We also found that thicker AlN buffer layers result in the best InN quality. With increasing thickness of an AlN buffer layer, the Hall electron mobility of InN increases while the carrier concentration decreases. The surface morphology is also improved this way. Hall mobility greater than 800 cm2/Vs with carrier concentration 2-3×1018 cm−3 at room temperature can be routinely obtained for ∼0.1[.proportional]m thick InN films. Various InN-based heterostructures with AlInN or AlN barrier were fabricated. X-ray diffraction study clearly shows the barrier and InN layers. A 2-dimensional electron gas resulting from polarization induced electrons was observed in capacitance-voltage measurements. Some results on Mg doping of InN will be discussed as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E3.2
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Strite, S. and Morkoc, H., J. Vac, Sci. & Technol. B 10, 1237 (1992).Google Scholar
2. O'Leary, S. K., Foutz, B. E., Shur, M. S. and Eastman, L. F., J. Appl. Phys. 83, 826 (1998).Google Scholar
3. Bellotti, E., Doshi, B. K., Brennan, K. F., Albrecht, J. D., Ruden, P. P., J. Appl. Phys. 85, 916 (1999).Google Scholar
4. Foutz, B. E., O'Leary, S. K., Shur, M. S. and Eastman, L. F., J. Appl. Phys. 85, 7727 (1999).Google Scholar
5. Tsuchiya, T., Ohnishi, M., Wakahara, A., Yoshida, A., J. Crystal Growth 220, 191 (2000).Google Scholar
6. Lu, H., Schaff, W. J., Hwang, J., Wu, H., Yeo, W., Pharkya, A., and Eastman, L. F., Appl. Phys. Lett. 77, 2548 (2000).Google Scholar