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Preparation of High-Quality CuInSe2 Thin Films by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

B. H. Tseng ,
S. B. Lin  and
D. J. Yang
B. H. Tseng
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University Kaohsiung 80424, TAIWAN, baeheng@mail.nsysu.edu.tw
S. B. Lin
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University Kaohsiung 80424, TAIWAN, baeheng@mail.nsysu.edu.tw
D. J. Yang
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University Kaohsiung 80424, TAIWAN, baeheng@mail.nsysu.edu.tw
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Abstract

CuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 169
Copyright
Copyright © Materials Research Society 1998

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