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Preparation of Boron Nitride Thin Films by MOCVD

Published online by Cambridge University Press:  10 February 2011

Sang-Yeol Lee ,
Yong-Gi Jin ,
Young-Woo Nam ,
Joong Kee Lee  and
Dalkeun Park
Sang-Yeol Lee
Affiliation:
Soong-sil University, Seoul, KOREA
Yong-Gi Jin
Affiliation:
Hong Ik University, Seoul, KOREA
Young-Woo Nam
Affiliation:
Soong-sil University, Seoul, KOREA
Joong Kee Lee
Affiliation:
Division of Chem. Eng., KIST, PO Box 131, Cheongryang, Seoul, KOREA
Dalkeun Park
Affiliation:
Soong-sil University, Seoul, KOREA
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Abstract

Boron nitride thin films were prepared on Si(100) substrate by CVD. Triethylboron and ammonia were employed as precursors and various operating parameters such as reactor pressure, temperature, feed rates of gases were varied to investigate their effects on deposition rate and film characteristics. Total gas pressure in the reactor was varied from atmospheric to I torr. Deposition temperature was in the range 850 – 1,050 °C. Deposition rate increased with partial pressure of TEB but decreased with total pressure in the reactor. Deposited films were examined with SEM, FTIR, XPS, AES, XRD. Prepared films were BN of turbostratic structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 119
Copyright
Copyright © Materials Research Society 1998

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References

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