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Preparation of a New SrBi2Ta2O9 (SBT) Chemical Solution Using Crown Ether and its Thin Film Deposition

Published online by Cambridge University Press:  10 February 2011

Yo-Sep Min ,
June Key Lee  and
In-Sook Lee
Yo-Sep Min*
Affiliation:
Microelectronics Lab, Samsung Advanced Institute of Technology, P.O. Box 11, Suwon 440–600, Korea
June Key Lee
Affiliation:
Microelectronics Lab, Samsung Advanced Institute of Technology, P.O. Box 11, Suwon 440–600, Korea
In-Sook Lee
Affiliation:
Microelectronics Lab, Samsung Advanced Institute of Technology, P.O. Box 11, Suwon 440–600, Korea
*
a) Author to whom correspondence should be addressed. e-mail: ysmin@sait.samsung.co.kr
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Abstract

A new chemical solution for the deposition of SrBi2Ta2O9 (SBT) thin films using crown ether is proposed. Crown ether enhances the solubility of bismuth acetate in acetic acid, which makes a solvent solution possible. A metal acetate-based SBT precursor solution was prepared in acetic acid using 18-crown-6, strontium acetate, bismuth acetate and tantalum ethoxide. (115)-preferentially oriented ferroelectric SBT thin films were formed on Pt/TiO2/SiO2/Si substrates by spin-coating with the new solution. After post-annealing at 800°C, a hysteresis loop obtained from a 2000Å thick SBT film with Pt electrodes showed a remanent polarization of ∼3μC/cm2 and a coercive voltage of ∼50kV/cm. It was shown from SIMS depth profiles that excess bismuth atoms in the SBT thin film diffused towards the Pt electrodes during post-annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 179
Copyright
Copyright © Materials Research Society 2000

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