Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-07-03T10:43:25.006Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation And Properties Of Fluorinated Amorphous Carbon Thin Films By Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Kazuhiko Endo  and
Toru Tatsumi
Kazuhiko Endo
Affiliation:
Microelectronics Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Toru Tatsumi
Affiliation:
Microelectronics Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

Fluorinated amorphous carbon films are proposed as low dielectric constant interlayer dielectrics for ULSI circuits. The films are deposited by plasma enhanced chemical vapor deposition with CH4, CF4 and C2F6 in a parallel-plate rf (13.56 MHz) reactor and a helicon wave reactor. In a parallel-plate reactor, the dielectric constant of the amorphous carbon films deposited with CH4 increases with increase in rf power. Addition of CF4 to CH4 reduces the dielectric constant to 2.1 and raises the deposition rate. However etching reaction occurs with high CF4/CH4 ratios. No film grows with only CF4. XPS measurement reveals that the F atoms are introduced into the amorphous carbon films. Helicon reactor has higher plasma density and is expected to achieve higher deposition rate for productive use. In this reactor, fluorinated amorphous carbon films without hydrogen content can be obtained with only CF4 and C2F6 gases. The growth rate of the films reaches 0.3 μ/min with C2F6 and 0.15 μ/min with CF4 at a source power of 2 kW and a gas flow rate of 100 sccm. With heating up to 300°C in a vacuum for 1 hour, the thickness of the films deposited with C2F6 does not shrink while that of films with CF4 shrinks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 381: Symposium F – Low-Dielectric Constant Materials--Synthesis and Applications in Micro. , 1995 , 249
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ushiki, Y., Kushibe, H., Ono, H., and Nishiyama, A., Porc. VLSI Multilevel Interconnection Conf., 413 (1990).Google Scholar
2 Yasuda, H., Plasma Polymerization (Academic Press Inc., New York, 1985).Google Scholar
3 d'Agostino, R., Cramarossa, F., and Illuzzi, F., J. Appl. Phys. 61, 2754 (1987).Google Scholar
4 Perry, A. J., Vender, D., and Boswell, R. W., J. Vac. Sci. Technol. B 9, 310 (1991).Google Scholar
5 Vossen, J. L., J. Elchem. Soc. 126, 319 (1979).Google Scholar
6 Vandentop, G. J., Kawasaki, M., Nix, R. M., Brown, I. G., Salmeron, M., and Somorjai, G. A., Phys. Rev. B 41, 3200 (1990).Google Scholar
7 Clark, D. T. and Shuttleworth, D., J. Poly. Sci. Poly. Chem. 18, 27 (1980).Google Scholar
8 d'Agostino, R., Cramarossa, F., Colaprico, V., and d'Ettole, R., J. Appl. Phys. 54, 1284 (1983).Google Scholar
9 Tsai, H. and Bogy, D. B., J. Vac. Sci. Technol. A 5, 3287 (1987).Google Scholar