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Preparation and Characterization of Wurtzitic Gan Single Crystals in Nano and Micro Scale

Published online by Cambridge University Press:  15 February 2011

San Yu ,
Hongdong Li ,
Haibin Yang ,
Dongmei Li ,
Haiping Sun  and
Guangtian Zou
San Yu
Affiliation:
National Laboratory of Super Hard Materials, Jilin University, Changchun 130023, P.R. China, shtem@mail.jlu.edu.cn
Hongdong Li
Affiliation:
National Laboratory of Super Hard Materials, Jilin University, Changchun 130023, P.R. China, shtem@mail.jlu.edu.cn
Haibin Yang
Affiliation:
National Laboratory of Super Hard Materials, Jilin University, Changchun 130023, P.R. China, shtem@mail.jlu.edu.cn
Dongmei Li
Affiliation:
National Laboratory of Super Hard Materials, Jilin University, Changchun 130023, P.R. China, shtem@mail.jlu.edu.cn
Haiping Sun
Affiliation:
National Laboratory of Super Hard Materials, Jilin University, Changchun 130023, P.R. China, shtem@mail.jlu.edu.cn
Guangtian Zou
Affiliation:
National Laboratory of Super Hard Materials, Jilin University, Changchun 130023, P.R. China, shtem@mail.jlu.edu.cn
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Abstract

Gallium nitride and its alloys are the most promising materials for short wave light emitters. If high quality GaN single crystals can be prepared, the GaN base light emitters should be fabricated directly on the lattice-matched GaN substrate.

In this work, GaN crystals in nano and micro scale with definite faces have been prepared by dc arc discharge using gallium and N2+NH3 as starting materials. Transmission electron microscope, selected area diffraction, x-ray microanalysis of energy dispersive spectroscopy, and x-ray diffraction investigation of the as grown GaN crystals show that the well faceted crystals are single crystalline GaN in wurtzite structure having lattice constants a0=3.18Å and c0=5.18Å. The crystal size of stoichoimetric GaN in wurtzite structure depends on the partial pressure of nitrogen in the plasma. The maximum crystal size in this work is about several micrometers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 403
Copyright
Copyright © Materials Research Society 1996

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