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Preparation and characterization of monolithic HgCdTe/CdTe tandem cells

Published online by Cambridge University Press:  01 February 2011

S. L. Wang ,
J. Drayton ,
V. Parikh ,
A. Vasko ,
A. Gupta  and
A. D. Compaan
S. L. Wang
Affiliation:
Department of Physics & Astronomy, University of Toledo, Toledo, OH, 43606, USA
J. Drayton
Affiliation:
Department of Physics & Astronomy, University of Toledo, Toledo, OH, 43606, USA
V. Parikh
Affiliation:
Department of Physics & Astronomy, University of Toledo, Toledo, OH, 43606, USA
A. Vasko
Affiliation:
Department of Physics & Astronomy, University of Toledo, Toledo, OH, 43606, USA
A. Gupta
Affiliation:
Department of Physics & Astronomy, University of Toledo, Toledo, OH, 43606, USA
A. D. Compaan
Affiliation:
Department of Physics & Astronomy, University of Toledo, Toledo, OH, 43606, USA
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Abstract

A prototype monolithic HgCdTe/CdTe superstrate tandem cell has been fabricated by RF sputtering, comprising a CdTe/CdS top cell, a ZnTe:N/ZnO:Al interconnect junction and a HgCdTe/CdS bottom cell. The Hg1−xCdxTe film as the bottom absorption layer was deposited by RF sputtering with 70% or 85% Cd content in the Hg1−xCdxTe magnetron target. Hg1−xCdxTe films with band gap from 0.98 eV to 1.45 eV were obtained by controlling the deposition temperature. CdCl2 thermal treatments were used to improve the Hg1−xCdxTe film electrical properties. A nitrogen-doped ZnTe film combined with an aluminium (Al) doped ZnO film formed a good interconnect junction. Results of Voc = 0.99 V and Jsc = 2.1 mA/cm2 were obtained in the best such tandem cell at one sun (AM1.5).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L7.5
Copyright
Copyright © Materials Research Society 2005

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References

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