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Porous silicon thin film gas sensor

Published online by Cambridge University Press:  17 March 2011

I. Ferreira
Affiliation:
Departamento de Ciência dos Materiais, CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP/UNINOVA, Quinta da Torre 2828-114 Caparica, Portugal.
E. Fortunato
Affiliation:
Departamento de Ciência dos Materiais, CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP/UNINOVA, Quinta da Torre 2828-114 Caparica, Portugal.
R. Martins
Affiliation:
Departamento de Ciência dos Materiais, CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP/UNINOVA, Quinta da Torre 2828-114 Caparica, Portugal.
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Abstract

The performances of amorphous and nano-crystalline porous silicon thin films as gas detector are pioneer reported in this work. The films were produced by the hot wire chemical vapour deposition (HW-CVD). These films present a porous like-structure, which is due to the uncompensated bonds and oxidise easily in the presence of air. This behaviour is a problem when the films are used for solar cells or thin film transistors. For as gas detectors, the oxidation is a benefit, since the CO, H2 or O2 molecules replace the OH adsorbed group. In the present study we observe the behaviour of amorphous and nano-crystalline porous silicon thin films under the presence of ethanol, at room temperature. The data obtained reveal a change in the current values recorded by more than three orders of magnitude, depending on the film preparation condition. This current behaviouris due to the adsorption of the OH chemical group by the Si uncompensated bonds as can be observed in the infrared spectra. Besides that, the current response and its recover time are done in few seconds.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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