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Polarity Control of LP-MOVPE GaN using N2 the Carrier Gas

Published online by Cambridge University Press:  01 February 2011

Seiji Mita ,
Ramon Collazo ,
Raoul Schlesser  and
Zlatko Sitar
Seiji Mita
Affiliation:
smita@unity.ncsu.edu, North Carolina State University, Materials Science and Engineering, 1001 Capability Dr., RB#1, Raleigh, NC, 27695 - 7919, United States
Ramon Collazo
Affiliation:
rcollaz@unity.ncsu.edu
Raoul Schlesser
Affiliation:
raoul_schlesser@ncsu.edu
Zlatko Sitar
Affiliation:
sitar@ncsu.edu
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Abstract

The polarity control of GaN films grown on c-plane sapphire substrates by LP-MOVPE using N2 as carrier and diluent gas was investigated in detail. The polarity type depended on the substrate preparation prior to the high temperature (HT) GaN growth. Device-quality Ga-polar GaN was obtained by using a low temperature (LT) AlN buffer layer followed by a specific annealing process. Optimized buffer layer thickness was 10 nm, with an annealing time of 20 min and a temperature of 1050 °C. By using these conditions for the buffer layer growth, mirror-like Ga-polarity GaN was grown using a V/III ratio of 100. The full width at half maximum (FWHM) of Ga-polar GaN films was 360 arcsec for the symmetric (00.2) reflection and 640 arcsec for the skew-symmetric (30.2) reflection. The surface roughness was measured by AFM to be 0.2 nm RMS and the growth rate was estimated at 2.0 μm/hr. These results indicated that by exclusively using N2 carrier gas, one can achieve films of the same quality as those more commonly grown by using H2 carrier gas.

Keywords

chemical vapor deposition (CVD) (chemical reaction)crystal growthepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF27-06
Copyright
Copyright © Materials Research Society 2006

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References

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