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Platinum-Accelerated Phase Transition in Bismuth-Based Layer-Structured Ferroelectric Thin Films

Published online by Cambridge University Press:  11 February 2011

Kazumi Kato
Affiliation:
National Institute of Advanced Industrial Science and Technology, 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463–8560, Japan Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda-cho, Midori-ku, Yokohama 226–8503, Japan
Kazuyuki Suzuki
Affiliation:
National Institute of Advanced Industrial Science and Technology, 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463–8560, Japan
Desheng Fu
Affiliation:
National Institute of Advanced Industrial Science and Technology, 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463–8560, Japan
Kaori Nishizawa
Affiliation:
National Institute of Advanced Industrial Science and Technology, 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463–8560, Japan
Takeshi Miki
Affiliation:
National Institute of Advanced Industrial Science and Technology, 2266–98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463–8560, Japan
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Abstract

The phase transition of non ferroelectric pyrochlore to ferroelectric perovskite in CaBi4Ti4O15 thin films depended on matching of the atomic arrangements in platinum bottom electrodes to the Ca-Bi-Ti-O thin films. CaBi4Ti4O15 thin films crystallized on (200)-oriented platinum at 650°C showed c-axis orientation. In contrast, thin films randomly crystallized on highly crystalline (111)-oriented platinum at the same temperature contained pyrochlore phase and showed P-V hysteresis loops. The ferroelectric properties improved with the degrees of (h00) orientation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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