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Plasma Immersion ion Implantation of Semiconductors

Published online by Cambridge University Press:  25 February 2011

N. W. Cheung ,
W. En ,
E. Jones  and
C. Yu
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
W. En
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
E. Jones
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
C. Yu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
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Abstract

This paper reviews recent developments of plasma immersion ion implantation (PHI) for semiconductor applications: ultra-shallow junction formation, microscopic conformai doping, metallization, and impurities gettering. We also discuss semiconductor processing issues with PHI: reactor design, wafer charging, surface deposition/etching., and secondary electron emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 297
Copyright
Copyright © Materials Research Society 1993

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References

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