Hostname: page-component-7c8c6479df-5xszh Total loading time: 0 Render date: 2024-03-28T12:46:14.226Z Has data issue: false hasContentIssue false

Plasma Deposition and Interface Control in Low Temperature Processing of Thin Film Solar Cells

Published online by Cambridge University Press:  10 February 2011

B. Jagannathan
Affiliation:
Present Address: IBM Microelectronics, Hopewell Junction, NY 12533
W. A. Anderson
Affiliation:
Department of Electrical and Computer Eng., State University of New York at Buffalo, Amherst, NY 14260
Get access

Abstract

Plasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon (μ c-Si) films were obtained by controlling the H2 dilution of 2% SiH4/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% ef ficient) were achieved by inserting a thin μ c-Si layer in the above structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bennet, M., Rajan, K., and Kritikson, K., Proc. 23rd IEEE Photovoltaic Conf., p. 845 (1993)Google Scholar
2. Torres, P., Meier, J., Flukiger, R., Kroll, U., Selvan, J. A. Anna, Keppner, H., and Shah, A., Appl. Phys. Lett. 69, p.1373 (1996)Google Scholar
3. Keppner, H., Torres, P., Meier, J., Platz, R., Fisher, D., Kroll, U., Dubail, S., Selvan, J. A. Anna, Vaucher, N. P., Zeigler, Y., Tscharner, R., Hof, Ch., Beck, N., Goetz, M., Pernet, P., Goerlitzer, M., Wyrsch, N., Veuille, J., Cuperus, J., Shah, A., and Pohl, J., Mater. Res. Soc. Conf., Boston (Dec. 1996)Google Scholar
4. Guha, S., , Proc. 25th IEEE Photovoltaic Conf. Proc., p.1017 (1996)Google Scholar
5. Mahan, A. H., Carapella, J., Nelson, B. P., and Crandall, R. S., J. Appl. Phys. 69, p. 6728 (1991)Google Scholar
6. Dalal, V., Baldwin, G., Ping, E. X., and Leonard, M., AIP Conf. Proc. 306, p.460 (1994)Google Scholar
7. Jagannathan, B., Wallace, R. L., Anderson, W. A., and Ahrenkiel, R. N., 26th IEEE PVSC, Anaheim (Sept. 1997)Google Scholar
8. Jagannathan, B. and Anderson, W. A., J. Appl. Phys. 82, p. 1930, 1997 Google Scholar
9. Jagannathan, B., Wallace, R. L, and Anderson, W. A., J. Vac. Sci. Tech. (In press)Google Scholar
10. Jagannathan, B. and Anderson, W. A., Solar Energy Materials and Solar Cells 46, p.289 (1997)Google Scholar
11. Rubinelli, F., Albornoz, S., and Buitrago, R., Solid State Electron. 32, p.547 (1989)Google Scholar