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Piezoelectric Photoacoustic Spectra In CuGaSe2 Thin Films Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

Kenji Yoshino
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan, yoshino@pem.miyazaki-u.ac.jp
Daisuke Maruoka
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan, yoshino@pem.miyazaki-u.ac.jp
Atsuhiko Fukuyama
Affiliation:
Department of Materials Science, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan
Kouji Maeda
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan, yoshino@pem.miyazaki-u.ac.jp
Paul J. Fons
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Shigeru Niki
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Akimasa Yamada
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Tetsuo Ikari
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-21, Japan, yoshino@pem.miyazaki-u.ac.jp
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Abstract

The piezoelectric photoacoustic (PPA) spectra for Cu-rich CuGaSe2 (CGS)/GaAs epitaxial layers were successfully observed between liquid nitrogen and room temperatures for the first time. Bandgap energy of CGS (A band) is estimated to be 1.72 eV at liquid nitrogen temperature. The activation energies of three possible intrinsic defect levels are estimated to be about 80, 130 and 190 meV.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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