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Piezoelectric Effect on Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  01 January 1993

Masashi Kawasaki ,
Masatomo Sumiya  and
Hideomi Koinuma
Masashi Kawasaki
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku Yokohama 227, Japan
Masatomo Sumiya
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku Yokohama 227, Japan
Hideomi Koinuma
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku Yokohama 227, Japan
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Abstract

As a potential method for controlling the surface reaction of plasma CVD, mechanical vibration generated by a piezoelectric device was applied on the substrate during glow discharge decomposition of SiH4. The application of 2MHz vibration dramatically improved the photoconductivity of a-Si:H films prepared at a substrate temperature of 120°C. IR and CPM spectra for the films revealed that the piezoelectric vibration remarkably modulated the amorphous network structure and reduced the defect density to 4.3x1014cm −3 which is the best among the values ever reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 139
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Knight, J.C., J. of Non-Crys. Solids 35&36 (1980) 159 Google Scholar
2. Gleason, K.K., Wang, K.S., Chen, M.K., and Reimer, J.A., J. Appl. Phys. 61 (1987) 2866 Google Scholar
3. Miyazaki, S., Inoue, Y., Kiriki, Y., and Hirose, M.; Jpn. J of Appl. Phys. 28(1989)2382 Google Scholar
4. Suzuki, A., Toyashima, Y., McElheny, P.J., and Matsuda, A.; Jpn. J. of Appl. Phys. 30 (1991) L790 Google Scholar
5. Ganguly, G., and Matsuda, A.; Jpn. J. of Appl. Phys. 31 (1992) L1269 Google Scholar
6. Matsuda, A. and Tanaka, K., J. of Non-Crys. Solids 97&97 (1987) 1367–1374 Google Scholar
7. Matsuda, A., Nomoto, K., Tachibana, Y., Suzuki, A., Yuuki, A., and Perrin, J.; Suf. Sci. 227 (1990) 50–56 Google Scholar
8. Perrin, J., Takeda, Y., Hirano, N., Takeuchi, Y., and Matsuda, A.; Surf. Sci. 210 (1989) 114 Google Scholar
9. Robertson, R., Hils, D., and Gallagher, A.; Chem. Phys. Lett. 103 (1984) 397 Google Scholar