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Physical Properties of Annealed a-CSiGe:H Alloys
Published online by Cambridge University Press: 25 February 2011
Abstract
The optoelectronic properties of the new semiconducting alloy a-CSiGe:H have been studied with particular regard to the dependence upon deposition and annealing temperature. Infrared and electrical results are interpreted in terms of hydrogen bonding.
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- Copyright © Materials Research Society 1989
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