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Physical and Electrical Properties of Defects Formed in Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

Yukio Takáno ,
Katsunori Kakumoto  and
Tomoya Funakoshi
Yukio Takáno
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda-shi, Chiba 278, Japan
Katsunori Kakumoto
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda-shi, Chiba 278, Japan
Tomoya Funakoshi
Affiliation:
Faculty of Industrial Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda-shi, Chiba 278, Japan
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Abstract

RTP will be replaced with some of the conventional thermal processing employed in ULSI fabrication lines in near future. We show at first the device characteristics demanded for next generation DRAM which is a typical example of ULSIs and some issues to satisfy the demands. Next we show some candidates for RTP in the ULSI processes and discuss difference between RTP and the conventional thermal processes. We think one of the largest difference is the quenching Si wafers after short time annealing and by the quenching the deep levels due to fast diffusing atoms and point defects in Si are introduced. Experimental results of N2 and Cu related deep levels are shown as the examples of the deep levels induced by the quenching in Si. Finally, we propose the gettering method for them in RTP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 275
Copyright
Copyright © Materials Research Society 1997

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References

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