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Photoresponse Study of Polycrystalline Diamond thin Film Schottky Diodes

Published online by Cambridge University Press:  21 February 2011

G. Zhao ,
T. Stacy ,
E. M. Charlson ,
E. J. Charlson ,
M. Hajsaid ,
R. Roychoudhury ,
A. H. Khan ,
J. M. Meese ,
Z. He  and
M. Prelas
G. Zhao
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
T. Stacy
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
E. M. Charlson
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
E. J. Charlson
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
M. Hajsaid
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
R. Roychoudhury
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
A. H. Khan
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
J. M. Meese
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, Missouri 65211
Z. He
Affiliation:
Department of Nuclear Engineering, University of Missouri, Columbia, Missouri 65211
M. Prelas
Affiliation:
Department of Nuclear Engineering, University of Missouri, Columbia, Missouri 65211
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Abstract

We are reporting the first quantitative photoresponse characteristics of boron doped hot-filament CVD (HFCVD) diamond based Schottky diodes using semi-transparent aluminum contacts in the spectral range of 300–1050 nm. Quantum efficiencies, obtained without correction for surface reflection in the visible and near UV region, were between 5 % and 10% when the diodes were unbiased. Effect of reverse bias on the photoresponse was investigated at selected photon energies. Reverse biased diodes exhibit increasing photoresponse and ultimately saturation. Quantum efficiency as high as 30% was also obtained at 500 nm, when a reverse bias of over I volt was applied. The photoresponse mechanism of CVD diamond Schottky diodes is also discussed. A Schottky barrier height of 1.15 ± 0.02 eV for Al-HFCVD diamond contacts was determined using the d.c. photoelectric method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 191
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Willingham, C., Hartnett, T., Robinson, C. and Klein, C., in proc. of 1st Intl. Conf. on Applications of Diamond Films and Related Materials, edited by Tzeng, Y., Yoshikawa, M., Murakawa, M. and Feldman, A. (elsevier, Newyork, 1991) p. 157 Google Scholar
[2] Partlow, W. D., Witkowski, R. E. and McHugh, J. P., in proc. of 1st Intl. Conf. on Applications of Diamond Films and Related Materials, edited by Tzeng, Y., Yoshikawa, M., Murakawa, M. and Feldman, A. (elsevier, Newyork, 1991) p. 163 Google Scholar
[3] Koidl, P., Wild, C., Locher, R. and Kohl, R., in Proc. of 2nd Intl. Conf. on Diamond Films and Related Materials, edited by Yoshikawa, M., Murakawa, M., Tzeng, Y. and Yarbrough, W. A., (MYU, Tokyo, 1993) p. 87 Google Scholar
[4] Marchywka, M., Hochedez, J. K., Geis, M. W., Socker, D. G., Moses, D. and Goldberg, R. T., Appl. Opt. 30 5011(1911)Google Scholar
[5] Hicks, M. C., Wronski, C. R., Grot, S. A., Gildenblat, G. Sh., Badzian, A. R., Badzian, T. and Messier, R., J. Appl. Phys. 65 2139(1989)Google Scholar
[6] Mort, J. and Okumura, K., Appl. Phys. Lett. 56 1898(1990)Google Scholar
[7] Jeng, D. G. and Tuan, H. S., Appl. Phys. Lett. 58 1271(1991)Google Scholar
[8] Grot, S. A., Lee, S., Gildenblat, G. Sh., Hatfield, C. W., Wronski, C. R., Badizan, A. R., Badzian, T. and Messier, R., J. Mater. Res. 5 2497(1990)Google Scholar
[9] Pan, L. S., Han, S., Kania, D. R., Zhao, S., Kagan, H., Gan, K. K. and Kass, R., in Proc. of 2nd Intl. Conf. on Diamond Films and Related Materials, edited by Yoshikawa, M., Murakawa, M., Tzeng, Y. and Yarbrough, W. A., (MYU, Tokyo, 1993) p. 71 Google Scholar
[10] Vaitkus, R., Inushima, T. and Yamazaki, S., in Proc. of 2nd Intl. Conf. on Diamond Films and Related Materials, edited by Yoshikawa, M., Murakawa, M., Tzeng, Y. and Yarbrough, W. A., (MYU, Tokyo, 1993) p. 95 Google Scholar
[11] Zhao, G., Charlson, E. M., Charlson, E. J., Stacy, T., Meese, J., Popovici, G. and Prelas, M., J. Appl. Phys., 73 1832(1993)Google Scholar
[12] Zhao, G., et al (unpublished)Google Scholar
[13] Zhao, G., Charlson, E. M., Liaw, B. Y., Charlson, E. J., Stacy, T., Meese, J. M. and Prelas, M., in Proc. of 2nd Intl. Conf. on Diamond Films and Related Materials, edited by Yoshikawa, M., Murakawa, M., Tzeng, Y. and Yarbrough, W. A., (MYU, Tokyo, 1993) p. 515 Google Scholar
[14] Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981)Google Scholar
[15] Gildenblat, G. Sh., Grot, S. A. and Badzian, A., Proc. of IEEE, 79 647(1991)Google Scholar
[16] Aoki, M., Shishikura, G., Ohdomari, I. and Kawarada, H., in Proc. of 2nd Intl. Conf. on Diamond Films and Related Materials, edited by Yoshikawa, M., Murakawa, M., Tzeng, Y. and Yarbrough, W. A., (MYU, Tokyo, 1993) p. 341 Google Scholar