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Photoresponse of Tellurium Rich TexSe(1−x) Nonlinear Optical Semiconductors

Published online by Cambridge University Press:  10 February 2011

G. J. Brown ,
Cindi L. Dennis ,
M. C. Ohmer  and
Arnold Burger
G. J. Brown
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, OH 45433-7707
Cindi L. Dennis
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, OH 45433-7707
M. C. Ohmer
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, OH 45433-7707
Arnold Burger
Affiliation:
Fisk University, 1000 17th Ave., N, Nashville, TN 37208-3051
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Abstract

The optical properties of TexSe(1−x) were studied for x = 0.8, 0.9, and 1.0. The results for variable temperature, polarization sensitive, spectral photoconductivity measurements on oriented single crystals, as well as the energy band gaps and their temperature dependencies are presented. In all cases, the band gap was found to increase with increasing temperature. Analytical expressions describing the temperature dependent behavior are reported. Furthermore, for the first time the characteristic two peak spectrum of tellurium was separated into its two components for incident radiation polarized parallel and perpendicular to the c-axis as a function of temperature. However, two distinct peaks were not discernible in the alloys, with or without polarization, although the signal intensity was slightly polarization dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 415
Copyright
Copyright © Materials Research Society 2000

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