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Photoresponse Of Organic Field-Effect Transistors Based On Soluble Semiconductors And Dielectrics

Published online by Cambridge University Press:  01 February 2011

Nenad Marjanović ,
Th. B. Singh ,
Serap Günes ,
Helmut Neugebauer  and
Niyazi Serdar Sariciftci
Nenad Marjanović
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Th. B. Singh
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Serap Günes
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Helmut Neugebauer
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Niyazi Serdar Sariciftci
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
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Abstract

Photoactive organic field-effect transistors, photOFETs, based on a conjugated polymer/fullerene blend, MDMO-PPV: PCBM (1:4), and polymeric dielectrics as polyvinylalcohol (PVA) or divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) with top source and drain electrodes were fabricated and characterized in dark and under AM1.5 illumination. With LiF/Al as top source and drain contacts the devices feature n-type transistor behavior in dark with electron mobility of 10-2 cm2/Vs. Under illumination, a large free carrier concentration from photo-induced charge transfer at the polymer/fullerene bulk heterojunction (photodoping) is created. The device performance was studied with different illumination intensities and showed to be strongly influenced by the nature of the organic dielectric/organic semiconductor interface resulting in phototransistor behavior in BCB-based photOFETs and in phototransistor or photoresistor behavior for PVA-based photOFETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I6.50
Copyright
Copyright © Materials Research Society 2005

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References

1 Sariciftci, N. S., Smilowitz, L., Heeger, A. J., and Wudl, F., Science 258, 1474 (1992).Google Scholar
2 Narayan, K. S. and Kumar, N., Appl. Phys. Lett, 79, 1891 (2001).Google Scholar
3 Hamilton, M. C., Martin, S. and Kanicki, J., IEEE Trans. Electron Devices, 51, 877 (2004).Google Scholar
4 Saragi, I., Pudzich, R., Fuhrmann, T. and Salbeck, J., Appl. Phys. Lett. 84, 2334 (2004).Google Scholar
5 Singh, Th. B., Marjanović, N., Matt, G. J., Günes, S., Sariciftci, N. S., Ramil, A. Montaigne, Andreev, A., and Sitter, H., Schwödiauer, R. and Bauer, S., Organic Electronics, in pressGoogle Scholar
6 Chua, L.-L., Ho, P. K. H., Sirringhaus, H. and Friend, R. H., Appl. Phys. Lett. 84, 3400 (2004).Google Scholar
7 Schwödiauer, R., Neugschwandtner, G. S., Bauer-Gogonea, S., Bauer, S. and Wirges, W., Appl. Phys. Lett. 75, 3998 (1999).Google Scholar
8 Singh, Th. B., Marjanović, N., Matt, G. J., Sariciftci, N. S., Schwödiauer, R. and Bauer, S., Appl. Phys. Lett. 85, 5409 (2004).Google Scholar
9 Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1981).Google Scholar
10 Hamilton, M. C., Martin, S. and Kanicky, J., Mat. Res. Soc. Symp. Proc. Vol. 771, 333, (2003).Google Scholar