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Photoreactions of Mo(CO)6 on Potassium Precovered Silicon Surface with UV to IR Radiation

Published online by Cambridge University Press:  25 February 2011

Z. C. Ying  and
W. Ho
Z. C. Ying
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science CenterCornell University, Ithaca, New York, 14853
W. Ho
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science CenterCornell University, Ithaca, New York, 14853
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Abstract

The adsorption and photoreactions of Mo(CO)6 coadsorbed with K on Si(111)7×7 at 90 K have been studied under ultra-high vacuum conditions. It is found that dissociative adsorption of Mo(CO)6 on the K preadsorbed surface occurs for coverages below a monolayer. A multilayer of physisorbed Mo(CO)6 molecules is formed on top of the monolayer. Under photon irradiation physisorbed Mo(CO)6 molecules are dissociated and CO desorption is observed. The photoreactions of Mo(CO)6 occur over a wide wavelength range from the UV to IR. In contrast, only UV radiation induces photoreactions of Mo(CO)6 on the K-free Si(111)7×7 surface. Evidently K opens a new channel for the photoreactions of Mo(CO)6 on the surface. A mechanism involving interactions between photogenerated charge carriers and the substrate-adsorbate complex is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 245
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1 Foord, J.S. and Jackman, R.B., Chem. Phys. Lett. 112, 190 (1984); Surf. Sci. 171, 197 (1986).CrossRefGoogle Scholar
2 Bartosch, C.E., Gluck, N.S., Ho, W., and Ying, Z., Phys. Rev. Lett. 57, 1425 (1986); N.S. Gluck, Z. Ying, C.E. Bartosch, and W. Ho, J. Chem. Phys. 86, 4957 (1987).CrossRefGoogle Scholar
3 Creighton, J.R., J. Appl. Phys. 59, 410 (1986); C.-C. Cho and S.L. Bernasek, J. Vac. Sci. Technol. A 5, 1088 (1987); J.R. Swanson, C.M. Friend, and Y.J. Chabal, J. Chem. Phys. 87, 5028 (1987).Google Scholar
4 Celii, F.G., Whitmore, P.M., and Janda, K.C., J. Phys. Chem. 92, 1604 (1988).Google Scholar
5 Celii, F.G., Whitmore, P.M., and Janda, K.C., Chem. Phys. Lett. 138, 257 (1987); T.A. Germer and W. Ho, J. Chem. Phys. 89, 562 (1988).Google Scholar
6 Ying, Z. and Ho, W., Surf. Sci. 198, 473 (1988).Google Scholar
7 Ying, Z. and Ho, W., Phys. Rev. Lett. 60, 57 (1988).CrossRefGoogle Scholar
8 So, S.K. and Ho, W., Appl. Phys. A 47, 000 (1988).Google Scholar
9 Shapira, Y., McQuistan, R.B., and Lichtman, D., Phys. Rev. B 15, 2163 (1977).CrossRefGoogle Scholar
10 Aspnes, D.E. and Studna, A.A., Phys. Rev. B 27, 985 (1983).CrossRefGoogle Scholar
11 Bachmann, R., Phys. Konden. Mater. 8, 31 (1968).Google Scholar
12 Junk, G.A. and Svec, H.J., Z. Naturforsch. 23b, 1 (1968).CrossRefGoogle Scholar
13 George, P.M. and Beauchamp, J.L., Thin Solid Films 67, L25 (1980); J. Chem. Phys. 76, 2959 (1982).Google Scholar