Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-24T11:57:23.263Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoplastic Effects in II-VI Crystals

Published online by Cambridge University Press:  15 February 2011

Shin Takeuchi ,
Koji Maeda  and
Kiyokazu Nakagawa
Shin Takeuchi
Affiliation:
Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
Koji Maeda
Affiliation:
Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
Kiyokazu Nakagawa
Affiliation:
Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
Get access

Abstract

A reversible change in the flow stress with the illumination of a band gap light (photoplastic effect: PPE) is observed commonly in II-VI semiconducting compounds both with the zincblende and the wurtzite structures. After reviewing the experimental results accumulated so far concerning the usually observed PPE, detailed microscopic experiments on CdTe (partly on CdS) single crystals are described. In-situ TEM straining experiments with a laser illumination system clarified that the dislocation mobility, evidently controlled by the Peierls mechanism, is not affected by light illumination.The investigation of the dislocation glide behavior over a longer range using the etch pit method and the cathodoluminescence microscopy with a SEM revealed that the dislocations are apt to become immobilized after traveling a certain distance from the sources with a high velocity.The dislocation loops and cusps observed by TEM suggest that the immobilization is caused by jog formation along screw segments. Those results suggest that the positive PPE is caused by the decrease in the mean free path of multiplied dislocations due to the enhanced jog formation by illumination. This viewpoint is supported by the high density of dislocation debris left in specimens deformed under illumination, the enhanced work hardening rate under illumination and the reduction of the PPE when the dislocation mean free path becomes determined by other photoinsensitive factors such as forest dislocation cutting and specimen size. The microscopic mechanism of the enhanced jog formation is discussed in terms of electrostatic interaction between charged point defects and dislocation charge which is increased with the illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 461
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ahlquist, C. A., Carroll, M. J. and Stroempl, P., J. Phys. & Chem. Solids 33, 337 (1972).Google Scholar
2. Osip'yan, Yu. A. and Savchenko, I. B., JETP Lett. 7, 100 (1968).Google Scholar
3. Nadeau, J. S., J. Appl. Phys. 35, 669 (1964).Google Scholar
4. Carlsson, L. and Svensson, C., Solid State Comm. 7, 177 (1969).Google Scholar
5. Osip'yan, Yu. A. and Petrenko, V. F., Sov. Phys. JETP 48, 147 (1978).Google Scholar
6. Gutmanas, E. Y. and Haasen, P., J. de Phys. 40, Suppl. C6–169 (1979).Google Scholar
7. Maeda, K., Nakagawa, K. and Takeuchi, S., Phys. Stat. Sol. (a) 48, 587 (1978).CrossRefGoogle Scholar
8. Gutmanas, E. Y., Travitzky, N., Plitt, U. and Haasen, P., Scripta Met. 13, 239 (1979).Google Scholar
9. Gutmanas, E. Y. and Haasen, P., Phys. Stat. Sol. (a) 63, 193 (1981).Google Scholar
10. Carlsson, L. and Ahlquist, C. N., J. Appl. Phys. 43, 2529 (1972).Google Scholar
11. Osip'yan, Yu. A. and Shikhsaidov, M. Sh., Sov. Phys. Solid State 15, 2475 (1974).Google Scholar
12. Gutmanas, E. Y., Travitzky, N. and Haasen, P., Phys. Stat. Sol. (a) 51, 435 (1979).Google Scholar
13. Shikhsaidov, M. Sh., Sov. Phys. Solid State 23, 968 (1981).Google Scholar
14. Osip'yan, Yu. A. and Petrenko, V. F., Sov. Phys. JETP 36, 916 (1973).Google Scholar
15. Carlsson, L., J. Appl. Phys. 42, 676 (1971).CrossRefGoogle Scholar
16. Osip'yan, Yu. A. and Savchenko, I. B., Sov. Phys. Solid State 14, 1723 (1973).Google Scholar
17. Osip'yan, Yu. A., Petrenko, V. F. and Savchenko, I. B., JETP Lett. 13, 442 (1971).Google Scholar
18. Klassen, N. V., Osip'yan, Yu. A. and Shikhsaidov, M. Sh., Sov. Phys. Solid State 18, 922 (1976).Google Scholar
19. Osip'yan, Yu. A. and Petrenko, V. F., Sov. Phys. JETP 42, 695 (1976).Google Scholar
20. Petrenko, V. F. and Whitworth, R. W., Phil. Mag. A 41, 681 (1980).CrossRefGoogle Scholar
21. Maeda, K., Nakagawa, K., Takeuchi, S. and Sakamoto, K., J. Mater. Sci. 16, 927 (1981).Google Scholar
22. Nakagawa, K., Maeda, K. and Takeuchi, S., J. Phys. Soc. Japan 49, 1909 (1980).Google Scholar
23. Nakagawa, K., Maeda, K. and Takeuchi, S., J. Phys. Soc. Japan 50, 3040 (1981).Google Scholar
24. Maeda, K. and Sakamoto, K., J. Phys. Soc. Japan 42, 1914 (1977).Google Scholar
25. Maeda, K. and Takeuchi, S., Japan. J. Appl. Phys. 20, L165 (1981).Google Scholar
26. Nakagawa, K., Maeda, K. and Takeuchi, S., J. Phys. Soc. Japan 48, 2173 (1980).Google Scholar
27. Kirichenko, L. G., Petrenko, V. F. and Uimin, G. V., Sov. Phys. JETP 42, 389 (1978).Google Scholar
28. Zaretskii, A. V., Osip'yan, Yu. A., Petrenko, V. F. and Strukova, G. K., Sov.Phys. Solid State 19, 240 (1977).Google Scholar
29. Buch, F. and Ahlquist, C. N., Mater. Sci. & Eng. 13, 194 (1974).Google Scholar