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Photoluminescence Study of Chloride Vpe-Grown Gan

Published online by Cambridge University Press:  10 February 2011

Tetsuzo Ueda ,
Masaaki Yuri ,
Heon Lee ,
James S. Harris Jr.  and
Takaaki Baba
Tetsuzo Ueda
Affiliation:
Electronics Research Laboratory, Matsushita Electronics Corporation, Osaka 569, Japan
Masaaki Yuri
Affiliation:
Electronics Research Laboratory, Matsushita Electronics Corporation, Osaka 569, Japan
Heon Lee
Affiliation:
Solid State Electronics Laboratory, CIS 329, Stanford University, Stanford, CA94305–4075
James S. Harris Jr.
Affiliation:
Solid State Electronics Laboratory, CIS 329, Stanford University, Stanford, CA94305–4075
Takaaki Baba
Affiliation:
Electronics Research Laboratory, Matsushita Electronics Corporation, Osaka 569, Japan
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Abstract

We have examined the effect of growth conditions on photoluminescence (PL) characteristics of chloride VPE-grown GaN films. Undoped GaN films are grown on sapphire by a newly developed chloride VPE system which utilizes GaCl3 and NH3 as source materials.

We find that the spectra depend strongly on the growth temperatures and the corresponding surface morphology. Peaks from excitons and donor-acceptor pairs (D-A pair) recombination are observed for the films with terrace-like flat surfaces grown at between 950°C and 1000°C. A peak due to exciton bound to neutral donors is observed for a growth temperature of 975°C where the acceptor-related peaks are not seen. Decreasing the growth temperature below 950°C causes rough surfaces due to three-dimensional growth, whereas increasing the growth temperature above 1000°C causes cracks or partial pealing off of the film. The films with rough surfaces or crystal failures show broad emission from deep acceptor levels. As a result, residual acceptors are eliminated in the very narrow range of the growth temperature around 975°C. It is also noted that an increase of the V/III ratio during the growth makes the line width of the band-edge peak narrower. The PL results show that a growth temperature around 975°C and high V/III ratio are essential to obtain better crystal quality and reduced concentration of residual acceptors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 189
Copyright
Copyright © Materials Research Society 1996

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