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Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

Published online by Cambridge University Press:  28 February 2011

Z.P. Wang ,
Z.X. Liu ,
H.X. Han ,
J.Q. Zhang ,
G.H. Li ,
Z.L. Peng  and
S.X. Yuan
Z.P. Wang
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
Z.X. Liu
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
H.X. Han
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
J.Q. Zhang
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
G.H. Li
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing 100083, P. O. Box 912, China
Z.L. Peng
Affiliation:
Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
S.X. Yuan
Affiliation:
Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
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Abstract

We have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

Keywords

II-VI compoundsuperlatticequantum wellphotoluminescencepressure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 1017
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCE

1 Haase, M.A., Qiu, J., DePuydt, J.M. and Cheng, H., Appl. Phys. Lett., 59 (1991)1272 Google Scholar
2 Jeon, H., Ding, J., Patterson, W., Nurmikko, A.V., Xie, W., Grillo, D.C., Kobayashi, M. and Gunshor, R.L., Appl. Phys. Lett., 59 (1991)3619 Google Scholar
3 Samarth, N., Lou, H., Furdyan, J.K., Alonso, R.G., Lee, Y.R., Ramdas, A.K., Qadri, S.B. and Otsuka, N., Appl. Phys. Lett., 56 (1990)1163 Google Scholar
4 Samarth, N., Lou, H., Furdyan, J.K., Qadri, S.B., Lee, Y.R., Ramdas, A.K. and Otsuka, N., J. Electron. Mater., 19 (1990)543 Google Scholar
5 Peng, Z.L., Li, J., Yao, W.H., He, L., Cheng, X.Y. and Yuan, S.X., Jpn. J. Appl. Phys., 31 (1992)L1583 Google Scholar
6 Reznitsky, A., Permogorov, S., Verbin, S., Naumov, A., Korostelin, Yu., Novozhilov, V. and Prokov’ev, S., Solid State Commun., 52 (1984)13 Google Scholar
7 Yao, T., Kato, M., Davies, J.J. and Tanino, H., J. Cryst. Growth, 86 (1988)552 Google Scholar
8 Ren, J., Bowers, K.A., Vaudo, R.P., Cook, J.W. Jr., Schetzina, J.F., Ding, J., Jeon, H. and Nurmikko, A.V., J. Cryst. Growth, 117 (1992)510 Google Scholar
9 Peng, Z.L., Zhang, J.M. and Yuan, S.X., Semicond. Sci. Technol., 8 (1993) 657 Google Scholar
10 Mao, H.K., Xu, J. and Bell, P.M., J. Geophys. Res., 91 (1986)4673 Google Scholar
11 Wolford, D.J. and Bradley, J.A., Solid State Commun., 53 (1985)1069 Google Scholar
12 Han, H.X., Wang, Z.P., Liu, Z.X., Qin, W.T., Peng, Z.L. and Yuan, S.X., to be publishedGoogle Scholar
13 Brasil, M.J.S.P., Nahory, R.E., Turco-Sandroff, F.S., Gilchrist, H.L. and Martin, R.J., Appl. Phys. Lett., 58 (1991) 2509 Google Scholar
14 O’Donnell, K.P., Parbrook, P.J., Yang, F., Chen, X., Irvine, D.J., Trager-Cowan, C., Henderson, B., Wright, P.J. and Cockayne, B., J. Cryst. Growth, 117 (1992)497 Google Scholar
15 Kobayashi, M., Mino, N., Katagiri, H., Kimura, R., Konagai, M. and Takahashi, K., J. Appl. Phys., 60 (1986)773 Google Scholar