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Photoluminescence, Raman Scattering and Rbs/Channeling of Epitaxial Fluorides
Published online by Cambridge University Press: 28 February 2011
Abstract
Growth conditions are described for producing high quality crystalline films of CaF2 on (100) and (111) GaAs and LaF3, CeF3 and NdF3 on (111) Si. Rutherford backscattering/channeling, low temperature (<2K) photolumin-escence and Raman scattering are used as diagnostic techniques to probe the crystalline quality of the films and the stress/disorder induced at the film-substrate interface due to lattice mismatch.
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- Copyright © Materials Research Society 1986