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Photoluminescence From 2D Electron Gas and Many Body Effects as a Probe of the Crystalline Quality of Pseudomorphic GaAs/InGaAs/AlGaAs and GaAs/N(GaAs)10(N+l)(InAs)m/AlGaAs Modfet Structures

Published online by Cambridge University Press:  21 February 2011

A. Tabata ,
T. Benyattout ,
G. Guillot ,
M. V. Baeta Moreira  and
M. A. Py
A. Tabata
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) Bât. 502 INSA-Lyon, 69621 Villeurbanne, France
T. Benyattout
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) Bât. 502 INSA-Lyon, 69621 Villeurbanne, France
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) Bât. 502 INSA-Lyon, 69621 Villeurbanne, France
M. V. Baeta Moreira
Affiliation:
Institut de Micro- et Optoélectronique, EPF - Lausanne, CH 1015, Switzerland.
M. A. Py
Affiliation:
Institut de Micro- et Optoélectronique, EPF - Lausanne, CH 1015, Switzerland.
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Abstract

We have performed low temperature (5K) photoluminescence (PL) measurements in order to study the crystalline quality of pseudomorphic modulation-doped field effect transistors (MODFET’s) grown by MBE. MODFET’s based on GaAs/AlGaAs with either an InGaAs or a (GaAs)n(InAs)m short period superlattice (SPS) channel have been studied. On modulation doped structures, the presence of free carriers into the channel strongly affects the PL emission. In this paper we present a study of PL line shape of MODFET structures with different channel thicknesses and growth conditions. A correlation between the PL line shape and these parameters is clearly observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 537
Copyright
Copyright © Materials Research Society 1994

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