Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-23T12:17:21.018Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence Characterization of Hydrogenated Nanocrystalline/Amorphous Silicon

Published online by Cambridge University Press:  31 January 2011

Jeremy D Fields ,
Craig Taylor ,
Juliuz George Radziszewski ,
David Baker ,
Guozhen Yue  and
Baojie Yan
Jeremy D Fields
Affiliation:
jefields@mines.edujerfields@gmail.com, Colorado School of Mines, Materials Science, CSM/GRL 231, 1310 Maple St., Golden, Colorado, 80401, United States, 303-384-2106
Craig Taylor
Affiliation:
pctaylor@mines.edu, Colorado School of Mines, Physics, 80401, Colorado, United States
Juliuz George Radziszewski
Affiliation:
chemid@earthlink.net, Colorado School of Mines, Golden, Colorado, United States
David Baker
Affiliation:
dabaker79@gmail.com, Colorado School of Mines, Physics, 80401, Colorado, United States
Guozhen Yue
Affiliation:
gyue@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Baojie Yan
Affiliation:
byan@uni-solar.com, United Solar Ovonic LLC, R&D, Troy, Michigan, United States
Get access

Abstract

The photoluminescence in a nc-Si/a-Si:H mixture has been investigated at varying excitation intensities, and temperatures We have also observed changes in the luminescence spectra, which are induced by sequential annealing at temperatures below the a-Si:H crystallization temperature (˜ 600°C). Two predominant luminescence peaks are observed at ˜ 0.95 eV and ˜ 1.30 eV, which are attributed to band tail-to-band tail transitions near the nc-Si grain boundaries and in the a-Si:H bulk, respectively. The 0.95 eV band saturates approaching 500 mW/cm2 excitation intensity. Annealing the nc-Si/a-Si:H mixture brings out a new low energy peak, centered at ˜ 0.70 eV, and which we believe to be due to oxygen defects.

Keywords

defectsphotoemissionelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A02-01
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Street, R. A. Hydrogenated Amorphous Silicon, Cambridge University Press, (1991)Google Scholar
2 Savchouk, A.U. Ostapenko, S. Nowak, G. Lagowski, J. and Jastrzebski, L. Appl. Phys. Lett. 67 (1) (1995)Google Scholar
3 Ostapenko, S.S. Savchouk, A.U. Nowak, G. Lagowski, J. and Jastrzebski, L. Mat. Sci. Forum Vols. 196–201 (1995) pp 1897–1902 Google Scholar
4 Merdzhanova, T. Carius, R. Klein, S. Finger, F. and Dimova-Malinovska, D., Thin Solid Films, 511–512 (2006) 394–398 Google Scholar
5 Muschik, T. and Schwarz, R. J. Non-Cryst. Sol. 164–166 (1993) 619 Google Scholar
6 Tajima, M. J. Cryst. Growth 103 (1990) 1–7 Google Scholar
7 Pankove, J.I. Optical Processes in Semiconductors, Dover Publications, Inc. (1971)Google Scholar
8 Yamaguchi, A. Tada, T. Murayama, K. and Ninomiya, T. Solid State Communications, Vol. 71, No. 4, pp 233–236 (1989)Google Scholar