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Photoluminescence and ESR study of Si1−xGex alloy nanocrystals

Published online by Cambridge University Press:  17 March 2011

K. Toshikiyo ,
M. Tokunaga ,
S. Takeoka ,
M. Fujii  and
S. Hayashi
K. Toshikiyo
Affiliation:
Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
M. Tokunaga
Affiliation:
Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
S. Takeoka
Affiliation:
Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
M. Fujii
Affiliation:
Department of Electrical and Electronics Engineering, faculty of engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
S. Hayashi
Affiliation:
Department of Electrical and Electronics Engineering, faculty of engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
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Abstract

Dangling bond defects in Si1−xGex alloy nanocrystals (nc-Si1−xGex) as small as 4 nm in diameter embedded in SiO2 thin films were studied by electron spin resonance (ESR), and the effects of the defects on photoluminescence (PL) properties were discussed. It was found that the ESR spectrum is a superposition of signals from Si and Ge dangling bonds at the interfaces between nc-Si1−xGex and SiO2 matrices (Si and Ge Pb centers). As Ge concentration increased, the intensity of the signal from the Ge Pb centers increased, while that from the Si Pb centers was almost independent of Ge concentration. The increase in the number of Ge Pb centers was accompanied by strong quenching of the PL. The observed correlation between the two measurements suggests that Ge Pb centers act as efficient non-radiative recombination centers for photogenerated carriers, resulting in the quenching of the PL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.14.1
Copyright
Copyright © Materials Research Society 2001

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