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Photo-Induced Corrosion in Microelectronic Devices Containing Dissimilar Metals.

Published online by Cambridge University Press:  15 February 2011

C. Belisle ,
L. Westergard ,
D. Florence ,
T. Haskett ,
G. Scott ,
B. Greenwood ,
J. Prasad  and
M. Engle
C. Belisle
Affiliation:
AMI Semiconductor Inc., 2300 Buckskin Road Pocatello, ID 83201 Phone: (208)-233-4690 Fax: (208)-234-6740 Email: cbelisle@amis.com
L. Westergard
Affiliation:
AMI Semiconductor Inc., 2300 Buckskin Road Pocatello, ID 83201 Phone: (208)-233-4690 Fax: (208)-234-6740 Email: cbelisle@amis.com
D. Florence
Affiliation:
AMI Semiconductor Inc., 2300 Buckskin Road Pocatello, ID 83201 Phone: (208)-233-4690 Fax: (208)-234-6740 Email: cbelisle@amis.com
T. Haskett
Affiliation:
AMI Semiconductor Inc., 2300 Buckskin Road Pocatello, ID 83201 Phone: (208)-233-4690 Fax: (208)-234-6740 Email: cbelisle@amis.com
G. Scott
Affiliation:
AMI Semiconductor Inc., 2300 Buckskin Road Pocatello, ID 83201 Phone: (208)-233-4690 Fax: (208)-234-6740 Email: cbelisle@amis.com
B. Greenwood
Affiliation:
AMI Semiconductor Inc., 2300 Buckskin Road Pocatello, ID 83201 Phone: (208)-233-4690 Fax: (208)-234-6740 Email: cbelisle@amis.com
J. Prasad
Affiliation:
AMI Semiconductor Inc., 2300 Buckskin Road Pocatello, ID 83201 Phone: (208)-233-4690 Fax: (208)-234-6740 Email: cbelisle@amis.com
M. Engle
Affiliation:
AMI Semiconductor Inc., 2300 Buckskin Road Pocatello, ID 83201 Phone: (208)-233-4690 Fax: (208)-234-6740 Email: cbelisle@amis.com
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Abstract

Various metals with different galvanic potentials are used to fabricate the microelectronic circuits. One of the most commonly used processes during integrated circuit manufacturing is the tungsten via fill. To obtain maximum interconnect density with low via resistance requires that metal-via overlap is essentially zero. Zero overlap with litho variations and thus misalignment may result in unlanded vias. Since the vias are used to connect various metal levels, a large number of these cases may occur causing device failures and thus yield loss. To study this problem a variety of test structures were studied and a new mechanism of corrosion was found. The tungsten corrosion observed in these structures was found to be photo-induced. In this paper we will discuss the mechanism of photoinduced galvanic corrosion that occurs between the aluminum and tungsten metal layers during microelectronic manufacturing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 781: Symposium Z – Mechanisms in Electrochemical Deposition and Corrosion , 2003 , Z3.6
Copyright
Copyright © Materials Research Society 2003

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References

1. Westergard, L., Belisle, C., Florence, D., Haskett, T., “Light Enhanced Tungsten Via Corrosion,” IEEE IRW, 2002, pp 159–161.Google Scholar
2. Lee, J.E., Chung, J.H., Park, H., Seo, T. W., Park, S. H., Chung, U., Kang, G. W., Lee, M. Y., “Plasma Charge-Induced Corrosion of Tungsten-Plug Vias in CMOS Devices,” IEEE IITC, 1999, pp. 273–275.Google Scholar
3. Bothra, S., Sur, H., Liang, V., “A new failure mechanism by corrosion of tungsten in a tungsten plug process,” Microelectronics Reliability 39, 1999, pp. 59–68.Google Scholar
4. Kim, J.I., Shin, K.S, Baek, K.H., Lee, D.J., Kim, K.H., Hwang, H.H., Lee, D.H., “Effects of Gas Species on Charging Induced Tungsten Plug Corrosion,” Jpn J Appl Phys Vol 41, 2002, pp.566–569.Google Scholar
5. Lillard, R.S., Kanner, G.S., Butt, D.P., “The Nature of Oxide Films on Tungsten in Acidic and Alkaline Solutions” Journal of the Electrochemical Society Volume 145, 1998, pp2718–2726 Google Scholar
6. Pierret, R.F., Semiconductor Device Fundamentals, New York: Addison-Wesley Publishing Company, 1996, ch. 9, pp. 347–359.Google Scholar