Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-28T08:35:21.099Z Has data issue: false hasContentIssue false
  • English
  • Français

Photodissociation of Trimethylindium and Trimethylgallium on GaAs(100) at 193nm Studied by Angle-Resolved XPS

Published online by Cambridge University Press:  25 February 2011

Satoshi Shogen ,
Masafumi Ohashi ,
Satoshi Hashimoto ,
Masahiro Kawasaki  and
Yasuo Hosokawa
Satoshi Shogen
Affiliation:
Hokkaido University, Institute for Electronics Science, Sapporo, Japan
Masafumi Ohashi
Affiliation:
Hokkaido University, Institute for Electronics Science, Sapporo, Japan
Satoshi Hashimoto
Affiliation:
Hokkaido University, Institute for Electronics Science, Sapporo, Japan
Masahiro Kawasaki
Affiliation:
Hokkaido University, Institute for Electronics Science, Sapporo, Japan
Yasuo Hosokawa
Affiliation:
Chichibu Research Laboratory, Chichibu, Japan.
Get access

Abstract

The chemisorption and photodecomposition of trimethylindium (TMIn) and trimethylgallium (TMGa) on GaAs(100) surfaces have been studied by angle-resolved X-ray photoelectron spectroscopy. The In-C bond cleavage of the adsorbed TMIn was observed when the substrate temperature was raised from 150 K to 300 K. The dissociation generates methyl radicals that react with the substrate Ga species to form the Ga-C bond. The In-C bond is also dissociated by 193 nm laser irradiation of TMIn adsorbed on the GaAs at 150 K. Irradiation at 351 nm caused no change in the X-ray photoelectron spectra since photodissociation is not due to the photoabsorption of the GaAs substrate but the photodecomposition of the adsorbed species. Similar results are observed for TMGa on a GaAs(100) substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 193
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Shogen, S., Matumi, Y., Kawasaki, M., Toyoshima, I. and Okabe, H., J. Appl. Phys. 70. 462 (1991).Google Scholar
2) Shogen, S., Matumi, Y., Kawasaki, M., Thin Solid Films 218, 58 (1992).Google Scholar
3) Otvos, J.W., Stevenson, D.P., J. Am. Chem. Soc. 78, 546 (1956).Google Scholar
4) Fadley, C.S., Prog. Surf. Sci. 16, 275 (1984).Google Scholar
5) McCaully, J.A., McCrary, V.R. and Donnelly, V.M., J. Phys. Chem. 93, 1148 (1989).Google Scholar