Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-23T22:40:23.486Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoconductivity Study of CrB and CrI in Silicon

Published online by Cambridge University Press:  25 February 2011

A. Schlette ,
R. Klenle ,
A. Dörnen ,
W. Kürner  and
K. Thonke
A. Schlette
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
R. Klenle
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
A. Dörnen
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
W. Kürner
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
K. Thonke
Affiliation:
Universität Stuttgart, 4. Phys. Institut, Pfaffenwaldring 57, D 7000 Stuttgart 80
Get access

Abstract

We observe in photoconductivity (PC) measurements EMT-like excited states of the pseudodonor CrB, which are responsible for the capture of free electrons due to their short lifetime. The energetic position of the ground state can be located at Ev + (292 ± 5) meV. A finestructure of the (CrB)° transition consisting of at least 15 components is observed in PC and high-resolution Fourier transform photoluminescence. In acceptor-free silicon a step in photoconductivity at 205 ± 10 meV is ascribed to interstitial Cr, whereas a second step at ~ 425 meV could be due to substitutional Cr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 239
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Literature

1 Ludwig, G.W., Woodbury, H.H., Solid State Physics, Seitz/Turnbull 13, 223 (1962)Google Scholar
2 Hangleiter, A., Phys. Rev. B 35 , 9149 (1987)Google Scholar
3 Conzelmann, H., Weber, J., Physica 116b, 291 (1983)Google Scholar
4 Conzelmann, H., Graff, K., Weber, E.R., Appl. Phys. A 30, 169 (1983)Google Scholar
5 Graff, K., Pieper, H., in “Semiconductor Silicon 1981”, ed. Huff, H.R. and Krlegler, R.J., The Electrochemical Society, 331 (1981)Google Scholar
6 Feichtinger, H., Czaputa, R., Appl. Phys. Lett. 39 , 706 (1982)Google Scholar
7 Zolotukhin, A.A., Milevskil, L.S., Sov. Phys. Solid State.13, 1598 (1972)Google Scholar
8 Janzén, E., Grossmann, G., Stedman, R., Grimmeiss, H. G., Phys. Rev. B 21, 8000 (1985)Google Scholar
9 Thonke, K., Hangleiter, A., Wagner, J., and Sauer, R., J. Phys. C 18, L795 (1985)Google Scholar
10 Morgan, J.v.M., Morgan, T.N., Phys. Rev. B 1, 739 (1970)Google Scholar