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Photocatalytic effect of SrZnO2 thin films

Published online by Cambridge University Press:  28 November 2013

Tohru Okamoto
Affiliation:
Advanced Device Laboratories and Department of Physics, Tokyo University of Science. Shinjuku, Tokyo 162-8601, Japan
Taro Ogita
Affiliation:
Advanced Device Laboratories and Department of Physics, Tokyo University of Science. Shinjuku, Tokyo 162-8601, Japan
Susumu Harako
Affiliation:
Advanced Device Laboratories and Department of Physics, Tokyo University of Science. Shinjuku, Tokyo 162-8601, Japan
Shuji Komuro
Affiliation:
Toyo University, Kawagoe, Saitama 350-8585, Japan Phone: +81-3-3260-4272 E-mail:xwzhao@rs.kagu.tus.ac.jp
Xinwei Zhao
Affiliation:
Advanced Device Laboratories and Department of Physics, Tokyo University of Science. Shinjuku, Tokyo 162-8601, Japan
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Abstract

The SrZnO2 thin films were fabricated by using laser ablation method. The films were annealed after deposition in order to improve the crystallinity. Water splitting experiments were carried out and hydrogen production over the SrZnO2 thin films were confirmed with no applied bias. The band gap of SrZnO2 was 3.41 eV which is 0.15 eV larger than that of ZnO. It suggests that the band gap was increased by doping Sr to ZnO, and the reducibility was improved. As a result, the rate of photocatalytic hydrogen production over the SrZnO2 was increased compared to ZnO.

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Copyright
Copyright © Materials Research Society 2013 

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References

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