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Phase Transformation of Smooth Diamond Films Grown by hot Filament Chemical Vapor Deposition on Positively Biased Silicon Substrates.

Published online by Cambridge University Press:  21 February 2011

G. Popovici ,
C. H. Chao ,
M. A. Prelas ,
E. J. Charlson  and
J. M. Meese
G. Popovici
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211
C. H. Chao
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
M. A. Prelas
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211
E. J. Charlson
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
J. M. Meese
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
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Abstract

Smooth diamond films have been grown by hot filament chemical vapor deposition under d.c. bias on mirror-polished Si substrates. Films a few micrometers thick were obtained in 30 minutes. Raman spectra showed very broad diamond peaks. X-ray diffraction showed the presence of diamond and also other carbon phase with a line 2.11 Å. With time, the films apparently underwent a phase transformation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 325
Copyright
Copyright © Materials Research Society 1994

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References

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