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Phase Separation and Ordering in InGaN alloys

Published online by Cambridge University Press:  10 February 2011

D. Doppalapudi ,
S. N. Basu  and
T. D. Moustakas
D. Doppalapudi
Affiliation:
Dept. of Manufacturing Engineering, Boston University, Boston, MA 02215.
S. N. Basu
Affiliation:
Dept. of Manufacturing Engineering, Boston University, Boston, MA 02215.
T. D. Moustakas
Affiliation:
Dept. of Electrical and Computer Engineering, Boston University, Boston, MA 02215.
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Abstract

We investigated phase separation and long-range atomic ordering in InGaN alloys grown on (11–20) sapphire substrates by molecular beam epitaxy (MBE). Compositional inhomogeneities were found in films grown at substrate temperatures ranging from 650 – 675°C when the indium content was larger than 20%. Upon annealing to 725°C, these films underwent phase separation, similar to films grown at 725° C.These InGaN films also showed the evidence of long-range atomic ordering, with the order parameter being a function of film composition and the growth parameters. A competition between ordering and phase separation has been observed, suggesting that the driving force for both phenomena is lattice strain in the alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 431
Copyright
Copyright © Materials Research Society 1998

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References

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