Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T23:38:09.983Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Formation in the Pt/Inp Thin Film System

Published online by Cambridge University Press:  25 February 2011

D. A. Olson ,
K. M. Yu  and
J. Washburn
D. A. Olson
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 T. Sands, Bellcore, 331 Newman Springs Rd., Red Bank, New Jersey 07701
K. M. Yu
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 T. Sands, Bellcore, 331 Newman Springs Rd., Red Bank, New Jersey 07701
J. Washburn
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 T. Sands, Bellcore, 331 Newman Springs Rd., Red Bank, New Jersey 07701
Get access

Abstract

InP substrates with 40nm metal films of Pt were encapsulated in SiO2, and isochronally annealed up to 600°C in flowing forming gas. The composition and morphology of the phases that formed were studied using x-ray diffraction, Rutherford Backscattering, and transmission electron microscopy.

Results show that the Pt/InP system begins interacting at 300°C. TEM analysis of the 350°C anneal shows unreacted Pt and and additional polycrystalline phases, with no observed orientation relationship with the substrate. The Pt layer has been completely consumed by 400°C, with a uniform reacted layer indicated by RBS. At high temperatures (between 500°C and 600°C), the reaction products are PtIn2 and PtP2. The two phases show a tendency for phase separation, with a higher concentration of PtP2 at the InP/reacted layer interface. The phosphide phase also shows a preferred orientation relationship with the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 47
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Williams, R. H., Varma, R. R., and Montgomery, V., Journal of Vacuum Science and Technology, 16(5), 1979, 1418.Google Scholar
[2] Spicer, W. E., Lindau, I., Skeath, P., Su, C. Y., and Chye, P., Physical Review Letters 44(6), 1980, 420.CrossRefGoogle Scholar
[3] Freeouf, J. L. and Woodall, J. M., Applied Physics Letters 39, 1981, 727.Google Scholar
[4] Brillson, L. J., Brucker, C. F., Katnani, A. D., Stoffel, N. G., Daniels, R., and Margaritondo, G., Journal of Vacuum Science and Technology, 21(2), 1982, 564.Google Scholar
[5] Lile, D. L., Journal of Vacuum Science and Technology B, 2(3), 1984, 496.CrossRefGoogle Scholar
[6] Robinson, G. Y., Physics and Chemistry of III-V Compound Semiconductor Interfaces (Wilmsen, C. W., ed.) p. 73, Plenum Press, New York (1985).Google Scholar
[7] Bahir, G., Merz, J. L., Abelson, J. R., and Sigmon, T. W., Journal of Electronic Materials, 16(4), 1987, 257.CrossRefGoogle Scholar
[8] Lince, J. R. and Williams, R. S., Journal of Vacuum Science and Technology B, 3(4), 1985, 1217.Google Scholar
[9] Beyers, R., Kim, K. B., and Sinclair, R., Journal of Applied Physics, 61(6), 1987, 2195.Google Scholar
[10] Brasen, D., Karlicek, R. F., and Donnelly, V. M., Journal of the Electrochemical Society, 130(7), 1983, 1473.Google Scholar
[11] Kumar, V., Journal of the Physics and Chemistry of Solids, 36, 1975, 535.Google Scholar
[12] Sinha, A. K. and Poate, J. M., Thin Films- Interdiffusion and Reactions (Poate, J. M., Tu, K. N., and Mayer, J. W., eds.) p. 416, John Wiley and Sons, New York, (1978).Google Scholar
[13] Fontaine, C., Okumura, T. and Tu, K. N., Journal of Applied Physics, 54, 1983, 1404.Google Scholar
[14] Sands, T., Keramidas, V. G., Yu, A. J., Yu, K. M., Gronsky, R., and Washburn, J., Journal of Materials Research, 2, 1987, 262.Google Scholar