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Phase and Mechanical Stress in and Surrounding Tisi2 and Cosi2 Lines Studied by Micro-Raman Spectroscopy

Published online by Cambridge University Press:  15 February 2011

I. De Wolf ,
D. J. Howard ,
K. Maex  and
H. E. Maes
I. De Wolf
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
D. J. Howard
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. E. Maes
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The local mechanical stress induced in a silicon substrate by silicide lines (CoSi2, CoSi, C49 and C54 TiSi2) with different thicknesses, widths and spacings is studied using micro-Raman spectroscopy. The results show that the stress becomes larger with increasing line thickness and decreasing line spacing. For the different silicides, the stress increases according to: CoSi < CoSi2 < C49 TiSi2 < C54 TiSi2. By fitting a simple stress model to the Raman data, quantitative values for the stress components can be determined. The dependence of the TiSi2 phase on thickness and line width is studied for the same samples. These studies show that micro-Raman spectroscopy can provide local information (μm resolution) on the TiSi2 phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 47
Copyright
Copyright © Materials Research Society 1996

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