Hostname: page-component-7bb8b95d7b-wpx69 Total loading time: 0 Render date: 2024-09-24T20:54:52.623Z Has data issue: false hasContentIssue false
  • English
  • Français

Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  10 February 2011

J. Z. Li ,
J. Y. Lin ,
H. X. Jiang ,
M. A. Khan ,
Q. Chen ,
A. Salvador ,
A. Botchkarev  and
H. Morkoc
J. Z. Li
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506–2601
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506–2601
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506–2601
M. A. Khan
Affiliation:
APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55449
Q. Chen
Affiliation:
APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55449
A. Salvador
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
A. Botchkarev
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
H. Morkoc
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Get access

Abstract

Persistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 537
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994).Google Scholar
2. Asif Khan, M., Shur, M. S., Kuznia, J. N., Chen, Q., Burn, J, and Schaff, W., Appl. Phys. Lett. 66, 1083 (1995).Google Scholar
3. Asif Khan, M., Chen, Q., Sun, C. J., Yang, J. W., Shur, M. S., and Park, H., Appl. Phys. Lett. 68 514 (1996).Google Scholar
4. Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Kim, W. K., Aktas, O., Botchkarev, A., and Morkoc, H., Appl. Phys. Lett. 67, 3387 (1995).Google Scholar
5. Johnson, C., Lin, J. Y., Jiang, H. X., Khan, M. A., and Sun, C. J., Appl. Phys. Lett. 68, 1808 (1996).Google Scholar
6. Li, J. Z., Lin, J. Y., Jiang, H. X., Salvador, A., Botchkarev, A., and Morkoc, H., Appl. Phys. Lett. 69, 1474 (1996).Google Scholar
7. Quieser, H. J. and Theodorou, D. E., Phys. Rev. B33, 4027 (1986).Google Scholar
8. Dissanayake, A., Elahi, M., Jiang, H. X., and Lin, J. Y., Phys. Rev. B45, 13996 (1992); J. Y. Lin, A. Dissanayake, G. Brown, and H. X. Jiang, Phys. Rev. B42, 5855 (1990).Google Scholar