Article contents
Performance enhancement of TiSi2 coated Si nanocrystal memory device
Published online by Cambridge University Press: 31 January 2011
Abstract
Self-aligned TiSi2 coated Si nanocrystal nonvolatile memory is fabricated. This kind of MOSFET memory device is not only thermally stable, but also shows better performance in charge storage capacity, writing, erasing speed and retention characteristics. This indicates that CMOS compatible silicidation process to fabricate TiSi2 coated Si nanocrystal memory is promising in memory device applications.
Keywords
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2009
References
- 4
- Cited by