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A Percolative Approach to Electromigration Modelling

Published online by Cambridge University Press:  17 March 2011

C. Pennetta ,
L. Reggiani ,
Gy. Trefán ,
F. Fantini ,
A. Scorzoni  and
I. DeMunari
C. Pennetta
Affiliation:
Lecce University, Dept. of Innovation Engineering, Lecce, Italy
L. Reggiani
Affiliation:
Lecce University, Dept. of Innovation Engineering, Lecce, Italy National Institute for Material Science, INFM, Italy
Gy. Trefán
Affiliation:
National Institute for Material Science, INFM, Italy
F. Fantini
Affiliation:
Modena University, Dept. of Engineering Sciences, Modena, Italy
A. Scorzoni
Affiliation:
Perugia University, Dept. of Electronic and Information Engineering, Perugia, Italy
I. DeMunari
Affiliation:
Parma University, Centro MTI, Parma, Italy
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Abstract

We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D2.7.1
Copyright
Copyright © Materials Research Society 2000

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