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Pentacene Transistors with Polymer Gate Dielectrics on Metallized Optical Fibers

Published online by Cambridge University Press:  01 February 2011

Jimmy Granstrom
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey, 07974
Howard E. Katz
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey, 07974
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Abstract

It is difficult to deposit a very thin polymer layer onto a fiber-shaped substrate from solution because the high interfacial energy can lead to dewetting. This difficulty presents itself when attempting to apply a gate dielectric to conductive fiber substrates during the fabrication of fiber transistors for use in applications such as “electrotextiles” and optical switches. We present a dip coating process that applies a gate dielectric to metal-coated optical fibers with high uniformity and reproducibility, resulting in pentacene field-effect transistors (FETs) with excellent transistor characteristics including mobilities up to 0.4 cm2/Vs and on/off ratios up to 7000. In one case, a memory effect was demonstrated. Several gate dielectrics were successfully applied to the optical fibers, suggesting a baseline set of suitable materials for this purpose. A thorough study of the dip coating conditions is presented, including proposed explanations of the effects of different coating procedures and solution physical properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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