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PbTiO3 and PbZrxTi1-zO3 Films:Microstructure and Properties

Published online by Cambridge University Press:  15 February 2011

A. E. M. De Veirman ,
J. F. M. Cillessen ,
M. De Keijser ,
R. M. Wolf ,
D. J. Taylor ,
A. A. Staals  and
G. J. M. Dormans
A. E. M. De Veirman
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
J. F. M. Cillessen
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
M. De Keijser
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
R. M. Wolf
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
D. J. Taylor
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
A. A. Staals
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
G. J. M. Dormans
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

Hetero-epitaxial PbTiO3 films have been grown on different oxidic substrates. The orientation (the c or a axis being perpendicular to the substrate surface) and the morphology of the PbTiO3 film have been studied with transmission electron microscopy and X-ray diffraction. For non-volatile memory applications ferroelectric capacitors consisting of PbZrxTi1-xO3 films and Pt electrodes are most commonly used. The microstructure of PbZrxTi1-xO3 films (x=0.36 and x=0.71) grown on oxidized silicon provided with a Ti/Pt electrode, will be discussed in relation to the ferrroelectric properties. Finally, the use of La0.5Sr0.5CoO3 as an oxidic electrode is considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 329
Copyright
Copyright © Materials Research Society 1994

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