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Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si:H Single-Layer

Published online by Cambridge University Press:  11 February 2011

Xiaowei Wang ,
Feng Qiao ,
Leyi Zhu ,
Wei Li ,
Jian Li ,
Xinfan Huang  and
Kunji Chen
Xiaowei Wang
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Feng Qiao
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Leyi Zhu
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Wei Li
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Jian Li
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Xinfan Huang
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Kunji Chen
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
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Abstract

We employ the method of phase-modulated KrF excimer pulsed laser interference crystallization to fabricate nanometer-sized crystalline silicon (nc-Si) with the two-dimensional (2D) patterned distribution within the ultra-thin a-Si:H single-layer. The local crystallization occurs after interference laser irradiation under proper energy density. The results of atomic force microscopy, Raman scattering spectroscopy, cross-section transmission electron microscopy and scanning electron microscopy demonstrate that Si nano-crystallites are formed within the initial a-Si:H single-layer, selectively located in the discal regions with the diameter of 350 nm and patterned with the same 2D periodicity of 2.0 μm as the phase-shifting grating. The results show that the present method can be used to fabricate patterned nc-Si films for device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.24
Copyright
Copyright © Materials Research Society 2003

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References

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