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Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

Published online by Cambridge University Press:  10 February 2011

Lingling Wu ,
Hongjun Gao  and
Dennis M. Manos
Lingling Wu
Affiliation:
Applied Science Department, College of William and Mary, Williamsburg, VA 23187, dmanos@as.wm.edu
Hongjun Gao
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831.
Dennis M. Manos
Affiliation:
Applied Science Department, College of William and Mary, Williamsburg, VA 23187, dmanos@as.wm.edu
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Abstract

A large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 625: Symposium Y – Solid Freeform & Additive Fabrication – 2000 , 2000 , 111
Copyright
Copyright © Materials Research Society 2000

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