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Oxygen Exchange Phenomena in SIO2 During Microwave-Discharge Plasma Oxidation

Published online by Cambridge University Press:  28 February 2011

Shin-Ichiro Kimura ,
Eiichi Murakami ,
Terunori Warabisako ,
Eisuke Mitani  and
Hidho sunami
Shin-Ichiro Kimura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji. Tokyo 185. Japan.
Eiichi Murakami
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji. Tokyo 185. Japan.
Terunori Warabisako
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji. Tokyo 185. Japan.
Eisuke Mitani
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji. Tokyo 185. Japan.
Hidho sunami
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji. Tokyo 185. Japan.
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Abstract

The oxygen migration process during microwave-discharge plasma oxidation of Si is investigated using 18O as a tracer. The exchange phenomena between migrating oxygen and its counterpart in SiO2 are observed. When plasma grown oxide (Si 18O2) is further oxidized in 18O-enriched plasma. 18O is observed both at the SiO2 /Si interface and in the bulk of Si16O2. For the reversed case. i.e. Si18 O2 is oxidized in 18O plasma, the total amount of pre-existing 18O decreases. The suppression of 18O is more drastic in the surface region. These oxygen distributions indicate that oxygen migrates toward the interface accompanied by oxygen exchange.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 787
Copyright
Copyright © Materials Research Society 1987

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References

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