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Oxygen Exchange Phenomena in SIO2 During Microwave-Discharge Plasma Oxidation
Published online by Cambridge University Press: 28 February 2011
Abstract
The oxygen migration process during microwave-discharge plasma oxidation of Si is investigated using 18O as a tracer. The exchange phenomena between migrating oxygen and its counterpart in SiO2 are observed. When plasma grown oxide (Si 18O2) is further oxidized in 18O-enriched plasma. 18O is observed both at the SiO2 /Si interface and in the bulk of Si16O2. For the reversed case. i.e. Si18 O2 is oxidized in 18O plasma, the total amount of pre-existing 18O decreases. The suppression of 18O is more drastic in the surface region. These oxygen distributions indicate that oxygen migrates toward the interface accompanied by oxygen exchange.
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