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Oxidation of PECVD SiC Deposited from Trimethylsilane

Published online by Cambridge University Press:  10 February 2011

Peter A. DiFonzo ,
Mona Massuda  and
James T. Kelliher
Peter A. DiFonzo
Affiliation:
Microelectronics Research Laboratory, Columbia, MD
Mona Massuda
Affiliation:
Microelectronics Research Laboratory, Columbia, MD
James T. Kelliher
Affiliation:
Applied Materials, Richmond, Va.
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Abstract

The stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 73
Copyright
Copyright © Materials Research Society 1999

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