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Origin of Lowered Crystallization Temperature in SBT-BTT Ferroelectric Thin Films

Published online by Cambridge University Press:  17 March 2011

Woo-Chul Kwak ,
Gopinathan M. A. Kumar ,
Se-Yon Jung ,
Seung-Joon Hwang  and
Yun-Mo Sung
Woo-Chul Kwak
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-koon, Kyunggi-do 487-711, Korea (South)
Gopinathan M. A. Kumar
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-koon, Kyunggi-do 487-711, Korea (South)
Se-Yon Jung
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-koon, Kyunggi-do 487-711, Korea (South)
Seung-Joon Hwang
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-koon, Kyunggi-do 487-711, Korea (South)
Yun-Mo Sung
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-koon, Kyunggi-do 487-711, Korea (South)
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Abstract

The crystallization kinetics of SBT and SBT-BTT thin films formed by sol-gel technique on Pt substrate was studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetics analysis was performed on x-ray diffraction (XRD) patterns of the thin films heated in the range 730 to 760° at 10° intervals. Activation energy and Avrami exponent values were determined for the fluorite to Aurivillus phase formation. A reduction of ∼55 kJ/mol in activation is observed for the SBT-BTT system. A comparison has been made and the possible crystallization mechanism is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C4.9.1
Copyright
Copyright © Materials Research Society 2002

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