Hostname: page-component-7bb8b95d7b-495rp Total loading time: 0 Render date: 2024-09-21T18:26:34.289Z Has data issue: false hasContentIssue false
  • English
  • Français

Origin of Grain Boundary Recombination Activity in Silicon Wafers

Published online by Cambridge University Press:  21 February 2011

H. Amanrich ,
S. Martinuzzi  and
M. Pasquinelli
H. Amanrich
Affiliation:
Laboratoire de Photoélectricité des Semiconducteurs, Faculté des Sciences et Techniques de Saint-Jérôme, F. 13397 Marseille Cedex 13
S. Martinuzzi
Affiliation:
Laboratoire de Photoélectricité des Semiconducteurs, Faculté des Sciences et Techniques de Saint-Jérôme, F. 13397 Marseille Cedex 13
M. Pasquinelli
Affiliation:
Laboratoire de Photoélectricité des Semiconducteurs, Faculté des Sciences et Techniques de Saint-Jérôme, F. 13397 Marseille Cedex 13
Get access

Abstract

In silicon bicrystals grain boundaries (GBs) become recombining after they have been annealed in argon at temperatures higher than 800°C for tens of hours. In order to verify the eventual influence of metallic elements, interstitials gold atoms are introduced in the bicrystals by diffusion (T ≤ 8000 C) from gold dots deposited far from the GB (gold could be segregated by the GB but cannot give deep levels in the grains). It is found by DLTS, EBIC contrast and LBIC scan map that the recombination strength of GBs is not changed by gold in diffusion in as grown bicrystals, while it is reduced in annealed samples. Similar results are obtained with GBs of polycrystalline wafers.

It is concluded that the activation of GBs in CZ silicon bicrystals is certainly due to the segregation of a slow diffuser like oxygen, and that fast diffusers play a secondary role only.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 179
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Pollock, G.A., Deline, V.R. and Furman, B.K. in Grain Boundaries in Semiconductors ed. by Leamy, H.J., Pike, G.E. and Seager, C.H., (Mater. Res. Soc. Proc. 5 Pittsburgh, PA 1982) pp 71–76.Google Scholar
2 Kazmerski, L.L. Proc. of 5th E.C. Photovoltaic Solar Energy Conf. (D. Reidel Pub. Comp. 1983), p 40.Google Scholar
3 Battistella, F., Rocher, A. and George, A. in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon ed. by Mikkelsen, J.C. Jr, Pearton, S.J., Corbett, J.W. and Pennycook, S.J., (Mater. Res. Soc. Proc. 59, Pittsburgh, PA 1986) pp 347–351.Google Scholar
4 Stützler, F.J. and Queisser, H.J., J. Appl. Phys. 60 3910 (1986).Google Scholar
5 Pizzini, S., Cagnoni, P., Sandrinelli, A., Anderle, M. and Canteri, R., Appl. Phys. Lett. 51 676 (1987).Google Scholar
6 Kazmerski, L.L. in Polysilicon Films and Interfaces ed. by Wong, C.Y., Thompson, C.V. and Tu, K.N., (Mater. Res. Soc. Proc. 106, Pittsburgh, PA 1988) pp 199–211.Google Scholar
7 Aucouturier, M., Broniatowski, A., Chari, A. and Maurice, J.L. in Polycrystalline Semiconductors ed. par Werner, J.H., Moller, H.S. et Strunk, H.P. (Springer Verlag Berlin 35, 1989), p 64.10.1007/978-3-642-93413-1_9Google Scholar
8 Broniatowski, A., Phys. Rev. Lett. 62 3074 (1989).Google Scholar
9 Spencer, M., Stall, R., Eastman, L.F. and Wood, C.E.C., J. Appl. Phys. 50 8006 (1979).10.1063/1.325985Google Scholar
10 Cheng, L.J. and Shyu, C.M. in Semiconductor Silicon 1981, ed. par Huff, H.R., Kriegler, R.J. et Takeishi, Y. (The Electrochem. Soc. Inc., Pennington 1981), p 390.Google Scholar
11 Martinuzzi, S. in Polycrystalline Semiconductors ed. par Werner, J.H., Moller, H.S. et Strunk, H.P. (Springer Verlag Berlin 35, 1989) p 148.Google Scholar
12 Schmalz, K., Kirscht, F.G., Klose, H., Richter, H. and Helmrich, K. Tittelbach, Phys. Stat. Sol. (a) 100, 567 (1987).10.1002/pssa.2211000223Google Scholar
13 Oates, A.S. and Newman, R.C., Appl. Phys. Lett. 49 262 (1986).Google Scholar
14 Bergholz, W., Hutchinson, J.C. and Pirouz, P., J. Appl. Phys. 58 3419 (1985).10.1063/1.335760Google Scholar
15 Laczik, Z., Booker, G.R. and Bergholz, W., Appl. Phys. Lett. 55 2625 (1989).Google Scholar