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The Origin and Nature of Contact Resistance in a-Si:H TFTs

Published online by Cambridge University Press:  16 February 2011

Serag M. Gadelrab  and
Savvas G. Chamberlain
Serag M. Gadelrab
Affiliation:
University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Ontario, Canada N2L 3G1.
Savvas G. Chamberlain
Affiliation:
University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Ontario, Canada N2L 3G1.
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Abstract

The origin of contact resistance in a-Si:H TFTs is investigated by formulating a model for the contact limited current. The Model accounts for the independent contributions of the Metal–n+a-Si:H interface resistance and the space charge limited conduction through the intrinsic a-Si:H film. Using our contact current model we investigated the I–V behavior of an n–i–n structure with a thin a-Si:H layer (=700Å) and found that the resistance of the Metal–n+a-Si:H interface is nonlinear. We incorporated the contact limited current expression into a full TFT Model and simulated the TFT performance for a wide range of Metal–n+a-Si:H interface resistance values and intrinsic a-Si:H film thicknesses. We found that the Metal–n+a-Si:H interface resistance dominates over space charge limited conduction for the thicknesses of intrinsic a-Si:H films used in AM-LCD switches. This trend is sustained even when the effective resistance of the Metal–n+a-Si:H interface decreases due to the nonlinear current conduction across it.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 835
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Kim, Y. S. et al, Mat. Res. Soc. Symp. Proc. 258, 991–996, (1992).Google Scholar
[2] Troutman, D. R. and Libsch, F. R., IEEE IEDM, 34.4.1–34.4.4, (1990).Google Scholar
[3] Lustig, N. and Kanicki, J., J. Appl. Phys. 65, 3951–3957, (1988).Google Scholar
[4] Uchikoga, S. et al, Mat. Res. Soc. Symp. Proc. 258, 1025–1030, (1992).Google Scholar
[5] GadeIRab, S. M. and Chamberlain, S. G., IEEE TED 41, 462–464, (1994).Google Scholar
[6] Possin, G. E. et al, Proceedings SID 26/3, 183–189, (1985).Google Scholar
[7] Troutman, D. R. and Kotwal, A., IEEE TED 36, 2915–2922, (1989).Google Scholar
[8] Lampert, M. A. and Mark, P., Current Injection in Solids, Academic Press, (1970).Google Scholar
[9] Deane, S.C. and Powell, M. J., Mat. Res. Soc. Symp. Proc., (1994).Google Scholar
[10] Shur, M. and Hack, M., J. Appl. Phys. 55, 3831–3842, (1984).CrossRefGoogle Scholar
[11] Hack, M. and Shur, M., J. Appl. Phys. 68, 5337–5342, (1990).Google Scholar
[12] Kanicki, J. et al, J. Appl. Phys. 69, 2339–2345, (1991).CrossRefGoogle Scholar
[13] Possin, G. E. and Su, F. C., Mat. Res. Soc. Symp. Proc. 118, 255–260, (1988).CrossRefGoogle Scholar