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Oriented Graphitic Carbon Film Grown by Mass-Selected Ion Beam Deposition at Elevated Temperatures

Published online by Cambridge University Press:  10 February 2011

J. Kulik ,
G. Lempert ,
E. Grossman  and
Y. Lifshitz
J. Kulik
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5932
G. Lempert
Affiliation:
Soreq Nuclear Research Center, Yavne 81800, Israel
E. Grossman
Affiliation:
Soreq Nuclear Research Center, Yavne 81800, Israel
Y. Lifshitz
Affiliation:
Soreq Nuclear Research Center, Yavne 81800, Israel
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Abstract

Mass-selected ion-beam deposition using 120 eV C+ ions has been used to grow a carbon film on a Si substrate held at 200° C. The structure of the film has been characterized by transmission electron microscopy and electron energy loss spectroscopy. The film is graphitic and highly oriented with the c-axis lying parallel to the substrate. Moreover, the film is under significant biaxial stress such that the graphitic layer spacing is reduced by 4% from that of ambient pressure graphite. This oriented structure evolves due to the mobility of the carbon atoms at 200 °C. The material is sufficiently crystalline on the nanometer scale so as to produce Bragg diffraction discs in a convergent beam electron diffraction pattern using a 2.5 nm probe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 305
Copyright
Copyright © Materials Research Society 2000

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References

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