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Orientation Characteristics with Process Parameters of PLZT(X/70/100) Thin Films Prepared by RF-Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

S.K. Kang ,
M.S. Park ,
D.B. Kim ,
K.S. No  and
S.H. Cho
S.K. Kang
Affiliation:
Department of Inorganic Materials Engineering, Kyungpook National University, Taegu, Korea
M.S. Park
Affiliation:
Department of Inorganic Materials Engineering, Kyungpook National University, Taegu, Korea
D.B. Kim
Affiliation:
LG Electro-Components Ltd., Osan-City, Kyungki-Do, Korea
K.S. No
Affiliation:
Department of Materials Science and Engineering, KAI ST, Taejon, Korea, skkang@cera.kyungpook.ac.kr
S.H. Cho
Affiliation:
LG Electro-Components Ltd., Osan-City, Kyungki-Do, Korea
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Abstract

PLZT(X/70/100) thin films on MgO(100), Pt/Ti/MgO(100), and Pt/Ti/Si(100) have been prepared by RF-magnetron sputtering process from sintered target with compositions of PLZT(X/70/100), where X=5, 10, and 15, respectively. The effects of substrate temperature, substrate and gas pressure on deposited thin films were studied. Crystalline and surface characterization was analyzed using XRD, SEM, AES, and AFM. X-ray rocking curves were measured to examine the film orientation. It was observed that the gas pressure was the dominant influence on having (001) preferred orientation. As a result, the degree of c-axis orientation increased as gas pressure decreased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 385
Copyright
Copyright © Materials Research Society 1997

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References

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