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Organic Thin Film Transiators on Synthesis Paper

Published online by Cambridge University Press:  26 February 2011

Hua-Chi Cheng
Affiliation:
Hua_Chi_Cheng@itri.org.tw, Industrial Technology Research Institute, EOL, R1024, Bldg. 51,195,SEc.4, Chungshin Rd, chutung, Hsinchu county, 310, Taiwan, 886-3-5917731, 886-3-5820093
Yu-Rung Peng
Affiliation:
pengyurung@itri.org.tw, Industrial Technology Research Institute, EOL, Hsinchu county, 310, Taiwan
Chao-An Chung
Affiliation:
CAjong@itri.org.tw, Industrial Technology Research Institute, EOL, Hsinchu county, 310, Taiwan
Wei-Hsin Hou
Affiliation:
jack_hou@itri.org.tw, Industrial Technology Research Institute, EOL, Hsinchu county, 310, Taiwan
Zing-Way Pei
Affiliation:
Zing-Way Pei@itri.org.tw, Industrial Technology Research Institute, EOL, Hsinchu county, 310, Taiwan
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Abstract

We have demonstrated organic thin-film transistor devices on synthesis paper of polypropylene (PP). All the fabrications are in solution-based processes except electrodes. As a barrier and smoother layer, photosensitive epoxy, 5μm-thich was coated on the paper substrate by using slit die coating. Polyvinyl phenol (PVP) was mixed with poly (melamine-co-formaldehyde) methylated, filmed by spin coating and ultraviolet (UV) cross linked to provide the gate dielectric layer. Using poly (3-hexylthiophene) as an active layer, a high-performance organic transistor with field effect mobility up to 0.006 cm2/ V s and an on/off ratio of 50 can be achieved. For the applications in flexible and disposable electronics, to built organic transistors on a cheap synthesis paper substrate can extremely lower the cost.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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